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1 of 14 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rf in vgq pin 1 (cut) rf out vdq pin 2 gnd base rf3931 30w gan wideband power amplifier the rf3931 is a 48v 30w high power disc rete amplifier designed for commercial wireless infrastructure, cellular and wi max infrastructure, industrial/scien- tific/medical, and general purpose broa dband amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high-performance amplifiers achieve high ef ficiency and flat gain over a broad fre- quency range in a single amplifier design. the rf3931 is an unmatched gan tran- sistor packaged in a hermetic, flanged ceramic package. this package provides excellent thermal stability through the use of advanced heat sink and power dissi- pation technologies. ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wide- band gain and power performance in a single amplifier. features ? broadband operation dc to 3.5ghz ? advanced gan hemt technology ? advanced heat-sink technology ? gain = 15db at 2ghz ? 48v operation typical performance at 900mhz ? output power 50w ?drain efficiency 65% ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband amplifiers ? public mobile radios ? industrial, scientific and medical rf3931s2 2-piece sample bag rf3931sb 5-piece bag rf3931sq 25-piece bag rf3931sr 100 pieces on 7? short reel rf3931tr7 750 pieces on 7? reel rf3931pck-411 fully assembled evaluation board optimized for 2.14ghz; 48v ds120406 ? package style: hermetic 2-pin flanged ceramic
2 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g ) -8 to +2 v gate current 23 ma operational voltage 65 v ruggedness (vswr) 10:1 storage temperature range -55 to +125 c operating temperature range (t l )-40 to +85c operating junction temperature (t j ) 200 c human body model class 1a mttf (t j < 200c, 95% confidence limits)* 3 x 10 6 hours thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only 3.6 c/w *mttf - median time to failure for wear-out failure mode (30%ldss degradation) which is determined by the technology reliability. refer to product qualification report for fit (random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. bias conditions should also satisfy the following expression: p diss < (t j ? t c ) / r th j-c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )2848v gate voltage (v gsq )-5-3-2.5v drain bias current 130 ma frequency of operation dc 3500 mhz capacitance c rss 4pfv g = -8v, v d = 0v c iss 17 pf v g = -8v, v d = 0v c oss 12 pf v g = -8v, v d = 0v dc function test i g (off) - gate leakage 2 ma v g = -8v, v d = 0v i d (off) - drain leakage 2.5 ma v g = -8v, v d = 48v v gs (th) - threshold voltage -4.2 v v g = -8v, i d = 6.6ma v ds (on) - drain voltage at high current 0.25 v v g = 0v, i d = 1.5a rf function test [1],[2] v gs (q) -3.5 v v d = 48v, i d = 130ma gain 10 12 db cw, p out = 45.8dbm, f = 2140mhz drain efficiency 55 60 % cw, p out = 45.8dbm, f = 2140mhz input return loss -12 -10 db cw, p out = 45.8dbm, f = 2140mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . parameter specification unit condition min. typ. max. rf typical performance [1],[2] small signal gain 20 db cw, f = 900mhz small signal gain 14 db cw, f = 2140mhz output power at p3db 47 dbm cw, f = 900mhz output power at p3db 46.5 dbm cw, f = 2140mhz drain efficiency at p3db 65 % cw, f = 900mhz drain efficiency at p3db 65 % cw, f = 2140mhz [1] test conditions: cw operation, v dsq = 48v, i dq = 130ma, t = 25c [2] performance in a standard tuned test fixture
4 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard 2.14ghz fixed tuned test fixture (cw, t = 25c, unless noted) -25 -23 - 21 -19 -17 -15 -13 -11 -9 -7 -5 6 7 8 9 10 11 12 13 14 15 16 2080 2110 2140 2170 2200 input return loss (db) gain (db) frequency (mhz) small signal performance vs. frequency, pout = 30dbm (vd = 48v, idq = 130ma) gain irl fixed tuned test circuit -25 -23 - 21 -19 -17 -15 -13 -11 -9 -7 -5 5 6 7 8 9 10 11 12 13 14 15 2080 2100 2120 2140 2160 2180 2200 input return loss (db) gain (db) frequency (mhz) gain/irl vs. frequency, pout = 46dbm (cw, vd = 48v, idq = 130ma) gain irl fixed tuned test circuit 50 52 54 56 58 60 2080 2100 2120 2140 2160 2180 2200 drain e?ciency (%) frequency (mhz) drain e?ciency vs. frequency, pout = 46dbm (cw, vd = 48v, idq = 130ma) e? fixed tuned test circuit
5 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 0 10 20 30 40 50 60 70 2 4 6 8 10 12 14 16 29 31 33 35 37 39 41 43 45 47 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 2140mhz (cw, vd = 48v, idq = 130ma) gain drain e? 0 10 20 30 40 50 60 70 2 4 6 8 10 12 14 16 30 32 34 36 38 40 42 44 46 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 2140mhz (pulsed 10% duty cycle, 10us, vd = 48v, idq = 130ma) gain drain e? -50 -45 - 40 - 35 -30 - 25 - 20 - 15 - 10 0 0 1 0 1 1 imd3, intermodulaon distoron (dbc) pout, output power (w - pep) imd3 vs. pout (2 - tone 1mhz seperaon, vd = 48v, idq varied, fc = 2140mhz) 65ma 100ma 130ma 260ma 390ma 10 11 12 13 14 15 16 17 18 0 0 1 0 1 1 gain (db) pout, output power (w- pep) gain vs. pout (2-tone 1mhz seperaon, vd = 48v, idq varied, fc = 2140mhz) 65ma 100ma 130ma 260ma 390ma - 70 - 60 - 50 - 40 - 30 -20 - 10 0 0 0 1 0 1 1 intermodulaon distoron (imd - dbc) pout, output power (w - pep) imd vs. output power (vd = 48v, idq = 130ma, f1 = 2139.5mhz, f2 = 2140.5mhz) - imd3 imd3 - imd5 imd5 -imd7 imd7
6 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard 900mhz fixed tuned test fixture (cw, t = 25c, unless noted) -10 -9 - 8 -7 -6 -5 -4 -3 -2 -1 0 12 13 14 15 16 17 18 19 20 21 22 880 890 900 910 920 input return loss (db) gain (db) frequency (mhz) small signal performance vs. frequency, pout = 30dbm (vd = 48v, idq = 130ma) gain irl fixed tuned test circuit - 10 -9 - 8 -7 -6 -5 -4 -3 -2 -1 0 12 13 14 15 16 17 18 19 20 21 22 880 890 900 910 920 input return loss (db) gain (db) frequency (mhz) gain/irl vs. frequency, pout = 47dbm (cw, vd = 48v, idq = 130ma) gain irl fixed tuned test circuit 60 62 64 66 68 70 880 890 900 910 920 drain e?ciency (%) frequency (mhz) drain e?ciency vs. frequency, pout = 47dbm (cw, vd = 48v, idq = 130ma) e? fixed tuned test circuit 0 10 20 30 40 50 60 70 14 15 16 17 18 19 20 21 22 29 31 33 35 37 39 41 43 45 47 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 900mhz (cw, vd = 48v, idq = 130ma) gain drain e?
7 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 15 16 17 18 19 20 21 22 0 0 1 0 1 1 gain (db) pout, output power (w - pep) gain vs. pout (2- tone 1mhz seperaon, vd = 48v, idq varied, fc = 900mhz) 65ma 100ma 130ma 260ma 390ma -60 -50 - 40 - 30 - 20 - 10 0 0 0 1 0 1 1 intermodulaon distoron (imd - dbc) pout, output power (w- pep) imd vs. output power (vd = 48v, idq = 130ma, f1 = 899.5mhz, f2 = 900.5mhz) -imd3 imd3 -imd5 imd5 -imd7 imd7 - 50 -45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 0 0 1 0 1 1 imd3, intermodulaon distoron (dbc) pout, output power (w - pep) imd3 vs. pout (2 - tone 1mhz seperaon, vd = 48v, idq varied, fc = 900mhz) 65ma 100ma 130ma 260ma 390ma
8 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (package style: flanged ceramic) pin function description 1 gate gate - vg rf input 2 drain drain - vd rf output 3 source source - ground base
9 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rf3931 evaluation board esd sensitive material. please use proper esd precau tions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering up the evaluation board. 1. connect rf cables at rf in and rf out . 2. connect ground to the ground supply terminal, and ensure that both the v g and v d grounds are also connected to this ground terminal. 3. apply -8v to v g . 4. apply 48v to v d . 5. increase v g until drain current reaches 130ma desired bias point. 6. turn on the rf input.
10 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 2.14ghz evaluation board schematic 2.14ghz evaluation board bill of materials component value manufacturer part number c1, c2, c10, c11 33pf atc atc800a330jt c3,c14 0.1 ? f murata grm32nr72a104ka01l c4,c13 4.7 ? f murata grm55er72a475ka01l c5 100 ? f panasonic ECE-V1HA101UP c6 2.2pf atc atc800a2r2bt c7 0.7pf atc atc800a0r7bt c8 1.0pf atc atc800a1r0bt c9 3.3pf atc atc800a3r3bt c12 100 ? f panasonic eev-tg2a101m c15 10pf atc atc800a100jt r1 10 ? panasonic erj-8geyj100v c16, c17, c18, c19 not used - - pcb ro4350, 0.030" thick dielectric rogers -

11 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 2.14ghz evaluation board layout device impedances note: device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. frequency (mhz) z source ( ? ) z load ( ?? 2110 2.6 - j3.1 6.5 + j5.8 2140 2.5 - j2.8 6.7 + j6.6 2170 2.4 - j2.5 7.0 + j7.4
12 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 900mhz evaluation board schematic 900mhz evaluation board bill of materials component value manufacturer part number c1, c2, c10, c11 68pf atc atc800b680jt c3,c14 0.1 ? f murata grm32nr72a104ka01l c4,c13 4.7 ? f murata grm55er72a475ka01l c5 100 ? f panasonic ECE-V1HA101UP c6 12pf atc atc800b120 c7 5.6pf atc atc800b5r6 c8 6.8pf atc atc800b6r8 c9 2.0pf atc atc800b2r0 c12 330 ? f panasonic eeu-fc2a331 r1 10 ? panasonic erj-8geyj100v rf3931 c6 r1 c1 c3 c4 c5 + v gate v drain c13 c14 c11 c12 + c7 c2 c10 50 strip 50 strip j1 rf in j2 rf out c8 c9
13 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 900mhz evaluation board layout device impedances note: device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. loadpull contours available on rfmd website. frequency (mhz) z source ( ? ) z load ( ?? 880 4.2 + j9.0 12.9 + j14.2 900 4.3 + j10.0 13.6 + j15.1 920 4.4 + j11.3 14.4 + j16.0
14 of 14 rf3931 ds120406 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/envir onmental conditions gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all three terminals of th e device. the physical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages ar e varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to th e drain. during the measurement pro- cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal ca pacitance measurements. the ca pacitance values presented in the typical characteristics table of th e device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletio n mode high electron mobility tr ansistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transi stor. the gate voltage must be taken to a potential lower than the source voltage to pinch off th e device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determin ed by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristic s of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance ta ble is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for bias ing this device based on performance trade off. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal charac- teristics. this is measured using ir microscopy capturin g the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the meas urement system from impacting the results. knowing the dissipated power at the time of th e measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat remo val must be considered to maintain the junction at or below the maximum of 200c. proper thermal design includes considerat ion of ambient temperature and the thermal resistance from ambient to the back of the package including he atsinking systems and air flow mecha- nisms. incorporating the dissipated dc power, it is possi ble to calculate the junction temperature of the device.

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